Multilayered electrostatic chuck and method of manufacture thereof

ABSTRACT

A ceramic electrostatic chucking device having electrostatic clamping electrodes suitable for clamping wafers and flat panel displays. The chucking device includes a top insulating layer, the clamping electrode, a second insulating layer, a first metallization layer for distributing power to one of the clamping electrodes, a third insulating layer, a second metallization layer for distributing power to the other clamping electrode, a fourth insulation layer, inner and outer heater electrodes, a fifth insulating layer, a third metallization layer for distributing power to the heater electrodes, and at least one additional insulating layer. The insulating layers include groups of electrically conductive feedthroughs for interconnecting the electrodes and metallization layers.

This application is a continuation of application No. 08/401,524, filedMar. 10, 1995, now U.S. Pat. No. 5,671,116.

FIELD OF THE INVENTION

The invention relates to an electrostatic chucking device useful in themanufacture of semiconductor devices and flat panel displays.

Background of the Invention

Various types of electrostatic chucking devices for clamping substratessuch as semiconductor wafers are disclosed in U.S. Pat. Nos. 3,993,509;4,184,188; 4,384,918; 4,431,473; 4,554,611; 4,502,094; 4,645,218;4,665,463; 4,692,836; 4,724,510; 4,842,683; 4,897,171; 4,962,441;5,055,964; 5,103,367; 5,110,438; 5,117,121; 5,160,152; 5,179,498;5,326,725; and 5,350,479 and British Patent No. 1,443,215.

Multilayer electrostatic chucking devices which utilize ceramicmaterials are disclosed in U.S. Pat. Nos. 5,151,845 and 5,191,506. The'845 patent discloses an arrangement including a base plate of alumina,silicon nitride, aluminum nitride, silicon carbide or the like, andfirst and second layers of titanium doped alumina having asilver/palladium electrode film pattern printed on lower surfacesthereof, the electrodes being individually and selectively supplied witha voltage to electrostatically attract a wafer. The '506 patentdiscloses an arrangement including a top 0.05 mm thick ceramic layer, anelectrically conductive electrostatic pattern of 0.75 mm wide stripsseparated by 0.25 mm gaps on a ceramic layer, a ceramic support layerand a water cooled metal heat sink base of Kovar (29Ni/17Co/53Fe).

Electrostatic chucking devices have been used for wafer transport andsupport during processing such as deposition, etching, ashing, etc. Forinstance, such chucking devices have been used to hold wafers in plasmareaction chambers. However, depending on the type of process carried outon the wafer, the chucking device may be subjected to the corrosiveeffects of the plasma and/or temperature cycles which may deleteriouslyaffect the chucking devices.

Substrate holders incorporating a heater are known in the art. Forinstance, U.S. Pat. No. 4,983,254 discloses a wafer supporting stagewhich includes a heater. The '254 patent does not disclose anyarrangement for electrostatically clamping the wafer.

It is known in the art to provide electrodes which are supplied radiofrequency at different frequencies and electrodes which are connected todirect current and RF sources. For instance, U.S. Pat. No. 4,579,618discloses a bottom electrode which serves as a workpiece holder andwhich is connected to a low frequency power supply and a high frequencypower supply, both of which are coupled to the electrode throughcoupling networks which are intended to optimize RF transmission throughimpedance matching. U.S. Pat. No. 4,464,223 discloses a bottom electrodefor supporting a workpiece and is connected to a low frequency AC powersupply through a matching network for creation of a low frequencyelectric field in a plasma chamber and the lower electrode is alsocoupled to a DC supply for allowing the amount of DC biasing induced bythe plasma to be changed, independently of pressure or power.

SUMMARY OF THE INVENTION

The invention provides a multilayered electrostatic chucking device,comprising a first insulating layer of an electrically insulatingceramic material, a second insulating layer of an electricallyinsulating ceramic material, and an electrostatic clamping electrodebetween the first and second insulating layers. The clamping electrodeincludes first and second strips of electrically conductive material.The chucking device also includes a third insulating layer ofelectrically insulating ceramic material and a heater electrode betweenthe second and third insulating layers.

According to one aspect of the invention, the first strip can beelectrically connected to a first direct current power supply and thesecond strip can be electrically connected to a second direct currentpower supply wherein the first and second direct current power suppliesare at opposite polarities. In addition, the clamping electrode can beelectrically connected to a radio frequency energy supply. The directcurrent power supplies the clamping electrode with energy sufficient toelectrostatically clamp a substrate on the first insulating layer andthe radio frequency energy supply provides the clamping electrode withenergy sufficient to provide a substrate clamped on the first insulatinglayer with an RF bias during plasma assisted deposition.

According to another aspect of the invention, the heater electrode cancomprise one or more spirally extending strips of electricallyconductive material. For instance, the heater electrode can comprise aninner heater electrode and an outer heater electrode surrounding theinner heater electrode. The chucking device can include a heat sinkbase, the third insulating layer being located between the heat sinkbase and the heater electrode.

The chucking device can include additional layers of ceramic materialsuch as a fourth insulating layer of electrically insulating ceramicmaterial and a metallization layer on the fourth insulating layer. Themetallization layer can include a plurality of radially extending legselectrically connected to the clamping electrode. Electrical power canbe supplied to the clamping electrode strips through a plurality ofgroups of electrically conductive feedthroughs in the second insulatinglayer. A first group of the feedthroughs can be electrically connectedto the first strip and a second group of the feedthroughs can beelectrically connected to the second strip. The chucking device can alsoinclude openings extending axially through the first, second and thirdinsulating layers and at least some of the openings can be large enoughto allow lifting pins to pass through the chucking device.

The invention also provides an electrostatic chucking device including afirst insulating layer of an electrically insulating ceramic material, asecond insulating layer of electrically insulating ceramic material, anelectrostatic clamping electrode between the first and second insulatinglayers wherein the clamping electrode includes first and second stripsof electrically conductive material, a first group of electricallyconductive feedthroughs extending through the second insulating layerand in electrical contact with the first strip, and a second group ofelectrically conductive feedthroughs extending through the secondinsulating layer and in electrical contact with the second strip.

The invention provides a method of making a ceramic electrostatic chuckcomprising steps of (a) providing a first metallization layer on a topside of a first insulating layer, the first insulating layer comprisingelectrically insulating ceramic material in a green state having firstand second groups of electrically conductive feedthroughs extendingtherethrough, the metallization layer comprising an electrostaticclamping electrode pattern of first and second strips of electricallyconductive material, (b) providing a second metallization layer on a topside of a second insulating layer, the second insulating layercomprising electrically insulating ceramic material in a green statehaving third groups of electrically conductive feedthroughs extendingtherethrough, the second metallization layer comprising a powerdistributing electrode pattern of electrically conductive material, (c)assembling the second insulating layer on a bottom side of the firstinsulating layer, (d) and cofiring the first and second insulatinglayers and forming a sintered body with the first and third groups offeedthroughs in electrical contact with the first strip and the secondgroup of feedthroughs in electrical contact with the second strip.

The method can further comprise steps of providing a third metallizationlayer on a top side of a third insulating layer, the third insulatinglayer comprising electrically insulating ceramic material in a greenstate, the third metallazation layer comprising a power distributionelectrode pattern of electrically conductive material, and assemblingthe third insulating layer on a bottom side of the second insulatinglayer prior to the cofiring step. The method can include providing afourth metallization layer on a top side of a fourth insulating layer,the fourth insulating layer comprising electrically insulating ceramicmaterial in a green state, the fourth metallization layer comprising aheater electrode pattern of electrically conductive material, andassembling the fourth insulating layer on a bottom side of the thirdinsulating layer prior to the cofiring step. The heater electrode cancomprise one or more spirally extending strips of electricallyconductive material. For instance, the heater electrode can include aninner heater electrode and an outer heater electrode surrounding theinner heater electrode. The method can include steps of attaching a heatsink base to the sintered body and assembling a top insulating layer onthe top of the first insulating layer of electrically insulatingmaterial in a green state prior to or subsequent to the cofiring step.

The invention also provides a method of manufacturing a ceramicelectrostatic chuck comprising steps of (a) providing a first insulatinglayer comprising electrically insulating ceramic material in a greenstate and having first and second groups of electrically conductivefeedthroughs extending therethrough, (b) providing a first metallizationlayer on a top side of a second insulating layer, the second insulatinglayer comprising electrically insulating ceramic material in a greenstate having third groups of electrically conductive feedthroughsextending therethrough and the first metallization layer comprising apower distributing electrode pattern of electrically conductivematerial, (c) assembling the second insulating layer on a bottom side ofthe first insulating layer, and (d) cofiring the first and secondinsulating layers and forming a sintered body with the first and thirdgroups of feedthroughs in electrical contact with each other.

The method can further comprise providing a second metallization layeron a top side of a third insulating layer wherein the third insulatinglayer comprises electrically insulating ceramic material in a greenstate and the third metallization layer comprises a power distributionelectrode pattern of electrically conductive material, and assemblingthe third insulating layer on a bottom side of the second insulatinglayer prior to the cofiring step. In addition, an electrostatic clampingelectrode pattern of first and second strips of electrically conductivematerial can be provided on the top side of the first insulating layersuch that the first and second groups of feedthroughs are in electricalcontact with the first strip and the second group of feedthroughs are inelectrical contact with the second strip. A top insulating layer ofelectrically insulating ceramic material can be provided over theclamping electrode and an exposed surface of the top insulating layercan be ground and/or polished to provide a predetermined distancebetween a top of the clamping electrode and the exposed surface of thetop insulating layer. The ceramic material of the top insulating layercan be in a green state and the step of providing the top insulatinglayer can be performed prior to or after the cofiring step.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an exploded view of a chuck in accordance with theinvention;

FIG. 2 shows an assembly of the layers shown in FIG. 1;

FIG. 3 shows a top view of another chuck in accordance with theinvention;

FIG. 4 shows a side view of the chuck shown in FIG. 3;

FIGS. 5-10 show details of layers of the chuck shown in FIGS. 3-4; and

FIG. 11 shows a suitable electrode pattern for a heater electrode inaccordance with the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The invention provides a multilayered electrostatic chucking and/ortransporting device which offers advantages over existing chuckingdevices in terms of performance, cost and/or ease of constructionthereof.

The electrostatic chuck according to the invention can be used fortransporting, holding and/or temperature control of a semiconductorwafer or gas substrate (i.e., flat panelled display) during processing,for example, in a CVD, PVD or etch reactor. The chuck can be used tohold the wafer/flat panel display substrate during processing and/orduring transport thereof. The chuck can optionally include thecapability of applying high RF bias voltage to the substrate duringplasma assisted deposition. According to a preferred embodiment of theinvention, the chuck incorporates ceramic materials such as alumina,aluminum nitride, etc. Further, the chuck can incorporate heatersembedded therein whereby a wafer can be preheated to a constanttemperature and maintained at such constant temperature duringprocessing thereof.

According to one aspect of the invention, cofired alumina tape layerswith refractory metallization (metals such as tungsten, etc.) areincorporated in the chuck. This technique allows advantages such asconsiderable latitude in designing the chuck with respect to provisionof multiple metal layers embedded in the ceramic layers. For instance,the chuck can include electrodes for clamping and RF with or withoutadditional heaters embedded in the ceramic material. The chuck accordingto the invention allows an RF bias as high as 10 watts/cm² to beachieved. Moreover, due to the use of ceramic layers, the porosityassociated with techniques such as anodization and flame spraytechniques can be avoided. Such porosity is deleterious since thepresence of the porosity results in a higher voltage being needed forclamping.

The chuck according to the invention can be used to process siliconwafers during processes such as etching, CVD, PVD, etc. With the chuckaccording to the invention, clamping pressures of 30 Torr can beachieved with an applied voltage of 1500 volts. In addition, suchclamping forces can be achieved with less than 1 sccm helium leakagebetween the chuck and the underside of the wafer. Further, with thechuck according to the invention, the upper dielectric layer can bethick allowing a groove design for the helium heat transfer mediumbetween the wafer and the chuck and the surface finish to be optimizeddepending on the particular process carried out in the reaction chamberin which the chuck is used.

The chuck according to the invention is particularly useful in clampingflat panel displays. Such displays are typically of glass. The chuck canclamp such glass substrates with a clamping pressure of 5 Torr and anapplied voltage of 2000 volts.

The chuck according to the invention utilizes multilayers of ceramicmaterials wherein metallization can be provided between adjacent ceramiclayers. With this arrangement heater electrodes can be provided betweenone set of ceramic layers and the clamping electrodes can be providedbetween a different set of ceramic layers. Further, since the chuck isof ceramic materials, the chuck can be exposed to an oxidizing plasmawithout damage thereto. In cases where the chuck is used in a reactionchamber in which deposition is carried out, the deposition by-productscan be chemically cleaned off the chuck without damage thereto.

The chuck according to the invention can incorporate one or more heaterelectrodes between adjacent ceramic layers or disposed between differentsets of ceramic layers. In the case where the chuck is used in areaction chamber in which deposition is carried out, the heaters can beindividually supplied with electrical power to provide for differentheating effects. For instance, if one heater is located in the centralarea of the chuck and the other heater is located in the periphery ofthe chuck, it is possible to power the heaters in a manner whichcompensates for plasma non-uniformity and/or edge effects. The heaterscan also be used to provide temperature control during wafer transportsuch as in a metal etch application.

The chuck can be manufactured in various ways. For instance, all of theceramic layers with refractory metal clamping electrodes/RFelectrodes/heater electrodes can be sintered together simultaneously.Alternatively, the chuck can be manufactured in steps wherein variousceramic layers with or without the clamping/RF electrode/heaterelectrode metal layers can be sintered to form part of the final chuck.For instance, all of the ceramic layers with or without the RFelectrodes/heater electrodes can be sintered to form a chuck which doesnot include the electrostatic clamping electrode layer. The clampingelectrode can be applied after grinding the assembly to make it flat.Then, after the electrodes are applied, a top dielectric layer such asdoped alumina, pure alumina, single crystal sapphire, etc., can beapplied over the clamping electrodes. The ceramic chuck can be supportedon a heat sink base. For instance, the base can be a non-magneticmaterial such as aluminum oxide, stainless steel, molybdenum, aluminumnitride, etc.

FIG. 1 shows an exploded view of a chuck 1 in accordance with oneembodiment of the invention. The chuck includes a top insulating layer2, a metallization layer 3 including first and second interdigitatingclamping electrodes, an insulating layer 4, a metallization layer 5 fordistributing power to one of the clamping electrodes, an insulatinglayer 6, a metallization layer 7 for distributing power to the otherclamping electrode, an insulating layer 8, a metallization layer 9including inner and outer heater electrodes, an insulating layer 10, ametallization layer 11 for distributing power to the heater electrodes,an insulating layer 12 and an insulating layer 13. In addition,feedthroughs 14 are provided in insulating layer 4, feedthroughs 15 areprovided in insulating layer 6, feedthroughs 16 are provided ininsulating layer 8, feedthroughs 17 are provided in insulating layer 10,feedthroughs 18 are provided in insulating layer 12 and feedthroughs 19are provided in insulating layer 13. One or more holes 20 can beprovided through the entire assembly to allow lift pins and/ortemperature probes and/or a heat transfer fluid such as helium tocontact the underside of a substrate supported on the insulating layer2.

Metallization layer 11 distributes electrical power to inner heaterelectrode 9a and outer heater electrode 9b. In particular, the wide endsof conductor paths 11a, 11b, 11c and 11d are electrically connected toconductors 11e, 11f, 11g and 11h, respectively. Conductors 11e, 11f, 11gand 11h fill four of the feedthrough holes 18 and 19. The thin ends ofconductor paths 11a and 11b, respectively, are connected to inner andouter portions of a coil forming inner heater electrode 9a and the thinends of conductor paths 11c and 11d, respectively, are connected toinner and outer portions of a coil forming outer heater electrode 9b.

FIG. 2 is a cross-section of the chuck 1 of FIG. 1 in the assembledcondition. As shown in FIG. 2, the radially extending legs ofmetallization layers 5, 7 are offset such that the legs are spaced 60degrees apart. Further, the chuck 1 includes five openings 20, three ofwhich are spaced 120 degrees apart and are used for passage of liftingpins and supplying helium to the backside of the wafer and the other twoopenings receive temperature probes.

FIGS. 3-10 show another embodiment of a chuck in accordance with theinvention. In particular, FIG. 3 shows a top view of chuck 21 and FIG. 4shows a side view of the chuck shown in FIG. 3. As shown in FIG. 4,chuck 21 includes top insulating layer 22, metallization layer 23including interdigitating first and second electrodes for applying anelectrostatic clamping force to the wafer and supplying an RF bias to aplasma gas used to process a substrate mounted on the to insulatinglayer 22. Insulating layer 24 separates metallization layer 25 frominsulation layer 26 and metallization layer 27 is between insulatinglayer 26 and insulating layer 28. The chuck also includes of insulatinglayers 29-33. Metallization layer 25 supplies electrical power to one ofthe electrodes comprising metallization layer 23. Metallization layer 27supplies electrical power to the other electrode comprisingmetallization layer 23. Details of layers 24-29 are provided in FIGS.5-9.

FIG. 5 shows details of insulating layer 24. In particular, insulatinglayer 24 includes electrical feedthrough openings 34 which are filledwith a conductive material for supplying electrical energy to one of theelectrodes comprising metallization layer 23. Five openings 35 areprovided for passage of lift pins and/or temperature probes and/orpassage of a cooling medium such as helium to the underside of asubstrate supported on insulating layer 22. The electrical feedthroughs34 are arranged in discrete groups of holes. For instance, if theclamping electrodes comprise strips which have a width of about 10 mmand are separated by gaps such as about 0.5 mm, the electricalfeedthroughs 34 can comprise holes about 0.02 inch in diameter and theseholes can be separated from each other by a distance such as about 4 mm.Thus, five holes can lie on a first segment of a circle, five holes canlie on a second segment of a circle of larger diameter and five holescan lie on a segment of a still larger circle, each of the circles beingseparated radially by about 4 mm and each of the holes on each segmentof the circles being separated by about 4 mm. Further, the groups ofholes can be arranged such that three discrete groups of holes arecircumferentially spaced apart in radially extending patterns which arespaced 120 degrees apart. The use of a large number of holes allows thepower requirements of the electrodes to be met. That is, when only a fewholes are used, the conductive material in the holes act as resistorsand cause the chuck to heat up. On the other hand, by providing a largenumber of holes as electrical feedthroughs, it is possible to supply ahigh power density to the electrodes while minimizing heat-up of thechuck.

FIG. 6 shows details of the metallization layer 25. In particular,metallization layer 25 includes three radially extending legs 36 whichare spaced apart by 120 degrees. The metallization layer 25 is inelectrical contact with the conductive material filled in electricalfeedthroughs 34. Thus, metallization layer 25 distributes electricalpower to one of the electrodes comprising metallization layer 23.

FIG. 7 shows details of insulating layer 26. Insulating layer 26includes electrical feedthroughs 34 and openings 35 as described inconnection with FIG. 5. In addition, insulating layer 26 includeselectrical feedthroughs 37 for supplying electrical power tometallization layer 25.

FIG. 8 shows details of metallization layer 27. Metallization layer 27includes three radially extending legs 38 spaced apart by 120 degrees.Metallization layer 27 differs from metallization layer 25 in thatmetallization layer 27 does not include a central aperture therein. Thecentral aperture in metallization layer 25 allows electricalfeedthroughs 34 to connect metallization layer 27 to an electrodelocated at a central part of metallization layer 23.

FIG. 9 shows details of insulating layer 28. Insulating layer 28includes electrical feedthroughs 37 for supplying power to metallization25 and openings 35 for passage of lifting pins and/or temperature probesand/or helium gas. In addition, insulating layer 28 includes electricalfeedthroughs 39 for supplying electrical power to metallization layer27. Insulating layers 29-32 are identical to insulating layer 28.

FIG. 10 shows details of insulating layer 29. In particular, insulatinglayer 29 includes openings 35 and electrical conductors 40, 41 forsupplying power to the electrical feedthroughs 37, 29, respectively.Individual power supplies 62, 64 can be used to supply power to theinner and outer heaters via conductors 40, 41. Further, the ceramicchuck can be supported on a heat sink base 66.

The electrostatic chucking electrode, 3, 23 can be used to supply an RFbias to a substrate during plasma assisted deposition. In such cases,the clamping electrode can be supplied a direct current voltage from DCpower supply 60 sufficient to clamp the substrate to the chuck andradiofrequency energy from RF power supply 70 sufficient to provide thesubstrate with an RF bias. The power supplies and associated circuitryto accomplish these objectives will be apparent to persons skilled inthe art. For instance, U.S. Pat. No. 4,464,223, the subject matter ofwhich is hereby incorporated by reference discloses details of powersupplies and circuitry to supply DC and RF power to an electrode forsupporting a workpiece.

The ceramic chuck according to the invention can be manufactured bycofiring the various ceramic and metallization layers or cofiring onlypart of the total ceramic chuck. For instance, the top insulating layer22 and/or metalliaztion layer 23 can be applied after the remainder ofthe chuck has been fired to provide a sintered body. The top layer 22can comprise a suitable insulating material such as aluminum oxide oraluminum nitride. The material of top layer 22 can be provided in powderform as a green sheet having any suitable thickness such as 0.028 inch.After the top layer has been fired, the top layer 22 can be ground downto a suitable thickness for purposes of adjusting the electrostaticclamping force. For example, the top layer can be ground down to providea thickness of 0.008 inch.

The metallization layers can be provided on ceramic green sheets by anysuitable process. For instance, electrically conductive paste such astungsten can be silk screened in desired patterns on alumina sheets.Alternatively, the metallization layer can be deposited and subsequentlyetched to provide the desired pattern of clamping electrodes. In thecase of metallization layer 23, the pattern can comprise alternatingrings having a height perpendicular to the plane of the alumina sheet of0.0008 inch, a width parallel to the plane of the alumina sheet of about10 mm and the rings can be separated by gaps of about 0.5 mm.

The electrical feedthrough holes 34 in the insulating layers 24, 26 and28 can have any suitable diameter and be spaced by any suitabledistance. For instance, the holes can have diameters of 0.02 inch andcan be spaced apart by about 4 mm. The number of holes can be adjustedto meet the power density requirements of the electrodes whilepreventing undesirable heat up of the chuck due to resistance heating ofthe electrically conductive material provided in the feedthroughs.

The metallization layers 25, 27 can be applied by silk screening of asuitable conductive material such as tungsten on alumina sheets. Themetalliaztion layers 25, 27 can have a propeller-like shape with thewidth of the legs in a direction parallel to the plane of the aluminasheets of about 20 mm and a thickness in a direction perpendicular tothe alumina sheets of about 0.0008 inch.

As shown in FIGS. 1 and 2, the chuck 1 can include heater electrodes.For instance, metallization layer 9 can include two groups of spiralrings with minor detours around power feeds and the holes for the liftpins/temperature probes. The heater electrodes can be used to compensatefor non-uniform heat distribution during processing of a wafer clampedon the chuck 1. For instance, one of the heaters can comprise an innergroup of rings which account for about 66% of the diameter of layer 9.The other heater can comprise an outer group of rings which account forthe outer 33% of the diameter of layer 9. The heaters are suppliedelectrical power by separate power supplies to allow individual controlof the heaters. For instance, the heaters can be supplied electricalpower by metllization layer 11 wherein metallization layer includes fourinterconnects, two of which are connected to the inner heater and two ofwhich are connected to the outer heater. The metalliazation layer 11 canbe silk screened on an alumina sheet in the same manner that the othermetallization layers are applied.

In order to maintain flatness of the chuck during operation thereof(e.g., avoid bowing during heating and cooling of the chuck), layers2-13 can be repeated to provide a mirror image of the arrangement shownin FIG. 1. That is, layers 2-13 would comprise one-half of the ceramicchuck and another set of layers 2-13 would extend from layer 13 inreverse order such that insulating layer 2 would lie at the top and thebottom of the chuck. Alternatively, any desired number of metallizationlayers could be provided on only one side of the chuck.

Details of a suitable heater electrode pattern are shown in FIG. 11wherein heater electrode 9 includes inner heater electrode 9a and outerheater electrode 9b. As the heater 9 is primarily used to heat a waferto a desired temperature prior to performing a deposition treatmentthereon, the heater can be omitted in chucking devices according to theinvention wherein the chuck is used solely for transporting a substrate(e.g., wherein the chuck 1, 21 is mounted on a suitable transportingmechanism such as a vertically movable pedestal, articulated roboticarm, or the like) or when the chuck is used in an etching environment.

The foregoing has described the principles, preferred embodiments andmodes of operation of the present invention. However, the inventionshould not be construed as being limited to the particular embodimentsdiscussed. Thus, the above-described embodiments should be regarded asillustrative rather than restrictive, and it should be appreciated thatvariations may be made in those embodiments by workers skilled in theart without departing from the scope of the present invention as definedby the following claims.

What is claimed is:
 1. A multilayered electrostatic chucking device,comprising:a first insulating layer of an electrically insulatingceramic material; a second insulating layer of an electricallyinsulating ceramic material; an electrostatic clamping electrode betweenthe first and second insulating layers, the clamping electrode includingfirst and second strips of electrically conductive material; a thirdinsulating layer of electrically insulating ceramic material; a heaterelectrode between the second and third insulating layers; the clampingelectrode being electrically connected to a direct current power supplyand a radio frequency energy supply, the direct current power supplyproviding the clamping electrode with energy sufficient toelectrostatically clamp a substrate on the first insulating layer andthe radio frequency energy supply providing the clamping electrode withenergy sufficient to provide a substrate clamped on the first insulatinglayer with an RF bias during plasma assisted deposition the chuckingdevice including groups of feedthroughs arranged so as to supply a highelectrical power density to the first and second strips while minimizingheat-up of the chucking device; and openings extending axially throughthe first, second and third insulating layers, the openings being largeenough to allow lifting pins to pass through the chucking device.
 2. Thechucking device of claim 1, wherein the heater electrode includes aninner heater electrode comprising a spirally extending strip ofelectrically conductive material.
 3. The chucking device of claim 2,wherein the heater electrode includes an outer heater electrodesurrounding the inner heater electrode, the outer heater electrodecomprising a spirally extending strip of conductive material.
 4. Thechucking device of claim 1, wherein the first strip is electricallyconnected to a first direct current power supply and the second strip iselectrically connected to a second direct current power supply, thefirst and second direct current power supplies being at oppositepolarities.
 5. The chucking device of claim 1, further comprising a heatsink base, the third insulating layer being located between the heatsink base and the heater electrode.
 6. The chucking device of claim 1,further comprising a fourth insulating layer of electrically insulatingceramic material and a metallization layer on the fourth insulatinglayer, the metallization layer including a plurality of radiallyextending legs electrically connected to the clamping electrode.
 7. Amultilayered electrostatic chucking device, comprising:a firstinsulating layer of an electrically insulating ceramic material; asecond insulating layer of an electrically insulating ceramic material;an electrostatic clamping electrode between the first and secondinsulating layers, the clamping electrode including first and secondstrips of electrically conductive material; a third insulating layer ofelectrically insulating ceramic material; and a heater electrode betweenthe second and third insulating layers; and a plurality of groups ofelectrically conductive feedthroughs in the second insulating layer, afirst group of the feedthroughs being electrically connected to thefirst strip and a second group of the feedthroughs being electricallyconnected to the second strip, the feedthroughs being arranged so as tosupply a high electrical power density to the first and second stripswhile minimizing heat-up of the chucking device.
 8. A multilayeredelectrostatic chucking device, comprisinga first insulating layer of anelectrically insulating ceramic material; a second insulating layer ofelectrically insulating ceramic material; an electrostatic clampingelectrode between the first and second insulating layers, the clampingelectrode including first and second strips of electrically conductivematerial; a first group of electrically conductive feedthroughsextending through the second insulating layer and in electrical contactwith the first strip; and a second group of electrically conductivefeedthroughs extending through the second insulating layer and inelectrical contact with the second strip, the feedthroughs beingarranged so as to supply a high electrical power density to the firstand second strips while minimizing heat-up of the chucking device. 9.The chucking device of claim 8, wherein the clamping electrode iselectrically connected to a direct current power supply and a radiofrequency energy supply, the direct current power supply providing theclamping electrode with energy sufficient to electrostatically clamp asubstrate on the first insulating layer and the radio frequency energysupply providing the clamping electrode with energy sufficient toprovide a substrate clamped on the first insulating layer with an RFbias during plasma assisted deposition.
 10. The chucking device of claim8, wherein the first strip is electrically connected to a first directcurrent power supply and the second strip is electrically connected to asecond direct current power supply, the first and second direct currentpower supplies being at opposite polarities.
 11. The chucking device ofclaim 8, further comprising a third insulating layer and a heaterelectrode between the third insulating layer and the second insulatinglayer, the heater electrode comprising a spirally extending strip ofelectrically conductive material.
 12. The chucking device of claim 11,wherein the heater electrode comprises an inner heater electrode, thechucking device further comprising an outer heater electrode surroundingthe inner heater electrode, the second heater electrode comprising aspirally extending strip of conductive material.
 13. The chucking deviceof claim 1, further comprising groups of electrically conductivefeedthroughs in the third insulating layer, the groups of thefeedthroughs in the third insulating layer being electrically connectedto the first strip.
 14. The chucking device of claim 13, furthercomprising a fourth insulating layer of electrically insulating ceramicmaterial and a second metallization layer on the fourth insulatinglayer, the second metallization layer including a plurality of radiallyextending legs electrically connected to the first strip.
 15. Thechucking device of claim 8, further comprising a heat sink base, thesecond insulating layer being located between the heat sink base and theclamping electrode.
 16. The chucking device of claim 8, furthercomprising openings extending axially through the first and secondinsulating layers, the openings being large enough to allow lifting pinsto pass through the chucking device.
 17. A method of making a ceramicelectrostatic chuck comprising steps of:providing a first metallizationlayer on a top side of a first insulating layer, the first insulatinglayer comprising electrically insulating ceramic material in a greenstate having first and second groups of electrically conductivefeedthroughs extending therethrough, the metallization layer comprisingan electrostatic clamping electrode pattern of first and second stripsof electrically conductive material; providing a second metallizationlayer on a top side of a second insulating layer, the second insulatinglayer comprising electrically insulating ceramic material in a greenstate having third groups of electrically conductive feedthroughsextending therethrough, the second metallization layer comprising apower distributing electrode pattern of electrically conductivematerial; assembling the second insulating layer on a bottom side of thefirst insulating layer; and cofiring the first and second insulatinglayers and forming a sintered body with the first and third groups offeedthroughs in electrical contact with the first strip and the secondgroup of feedthroughs in electrical contact with the second strip, thefeedthroughs being arranged so as to supply a high electrical powerdensity to the first and second strips while minimizing heat-up of thechuck.
 18. The method of claim 17, further comprising providing a thirdmetallization layer on a top side of a third insulating layer, the thirdinsulating layer comprising electrically insulating ceramic material ina green state, the third metallization layer comprising a second powerdistribution electrode pattern of electrically conductive material, andassembling the third insulating layer on a bottom side of the secondinsulating layer prior to the cofiring step.
 19. The method of claim 18,further comprising providing a fourth metallization layer on a top sideof a fourth insulating layer, the fourth insulating layer comprisingelectrically insulating ceramic material in a green state, the fourthmetallization layer comprising a heater electrode pattern ofelectrically conductive material, and assembling the fourth insulatinglayer on a bottom side of the third insulating layer prior to thecofiring step.
 20. The method of claim 19, wherein the heater electrodecomprises a spirally extending strip of electrically conductivematerial.
 21. The method of claim 20, wherein the heater electrodecomprises an inner heater electrode, the chucking device furthercomprising an outer heater electrode surrounding the inner heaterelectrode, the second heater electrode comprising a spirally extendingstrip of conductive material the first and second heater electrodesbeing powered by independent power sources.
 22. The method of claim 17,further comprising attaching a heat sink base to the sintered body. 23.The method of claim 17, further comprising assembling a top insulatinglayer on the top of the first insulating layer of electricallyinsulating material in a green state prior to the cofiring step.
 24. Themethod of claim 17, further comprising assembling a top insulating layeron the top of the first insulating layer of electrically insulatingmaterial in a green state subsequent to the cofiring step.
 25. A methodof making a ceramic electrostatic chuck comprising steps of:providing afirst insulating layer having an electrostatic clamping electrodepattern of first and second strips of electrically conductive materialon the top side thereof, the first insulating layer comprisingelectrically insulating ceramic material in a green state having firstand second groups of electrically conductive feedthroughs extendingtherethrough, the first group of feedthroughs being in electricalcontact with the first strip and the second group of feedthroughs beingin electrical contact with the second strip; providing a firstmetallization layer on a top side of a second insulating layer, thesecond insulating layer comprising electrically insulating ceramicmaterial in a green state having third groups of electrically conductivefeedthroughs extending therethrough, the first metallization layercomprising a power distribution electrode pattern of electricallyconductive material; assembling the second insulating layer on a bottomside of the first insulating layer; and cofiring the first and secondinsulating layers and forming a sintered body with the first and thirdgroups of feedthroughs in electrical contact with each other, thefeedthroughs being arranged so as to supply a high electrical powerdensity to the first and second strips while minimizing heat-up of thechuck.
 26. The method of claim 25, further comprising providing a secondmetallization layer on a top side of a third insulating layer, the thirdinsulating layer comprising electrically insulating ceramic material ina green state, the third metallization layer comprising a powerdistribution electrode pattern of electrically conductive material, andassembling the third insulating layer on a bottom side of the secondinsulating layer prior to the cofiring step.
 27. The method of claim 25,further comprising providing a top insulating layer of electricallyinsulating ceramic material over the clamping electrode.
 28. The methodof claim 27, further comprising grinding an exposed surface of the topinsulating layer to provide a predetermined distance between a top ofthe clamping electrode and the exposed surface of the top insulatinglayer.
 29. The method of claim 27, wherein the ceramic material of thetop insulating layer is in a green state and the step of providing thetop insulating layer is performed prior to the cofiring step.
 30. Themethod of claim 25, wherein the step of providing the clamping electrodeis performed after the cofiring step.